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 JMnic
Product Specification
Silicon NPN Power Transistors
2SC2582
DESCRIPTION With TO-126 package Large collector power dissipation High transition frequency APPLICATIONS Audio frequency power amplifier
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector- emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature -55 10 150 +150 ae ae Open collector CONDITIONS VALUE 45 35 5 1 1.5 1.2 W UNIT V V V A A
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SC2582
SYMBOL
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=2mA ;IB=0
35
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
45
V
VCEsat
Collector-emitter saturation voltage
IC=500mA ;IB=50mA
0.5
V
ICEO
Collector cut-off current
VCE=20V; IB=0
100
|I
A
ICBO
Collector cut-off current
VCB=20V; IE=0
0.1
|I
A
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
|I
A
hFE-1
DC current gain
IC=500mA ; VCE=10V
85
340
hFE-2
DC current gain
IC=1A ; VCE=5V
50
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
20
pF
fT
Transition frequency
IC=50mA ; VCE=10V
200
MHz
hFE-1 Classifications Q 85-170 R 120-240 S 170-340
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2582
Fig.2 Outline dimensions
3


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